| Customization: | Available |
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| Conductive Type: | Unipolar Integrated Circuit |
| Integration: | GSI |
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Part Number
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IPP120N10S403AKSA1
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Description
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MOSFET N-CH TO220-3
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Minimum Quantity
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1
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Packaging
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Tube
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Series
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Automotive, AEC-Q101, OptiMOS™
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FET Type
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N-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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100V
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Current - Continuous Drain (Id) @ 25°C
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120A (Tc)
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Drive Voltage (Max Rds On, Min Rds On)
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10V
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Rds On (Max) @ Id, Vgs
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3.9 mOhm @ 100A, 10V
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Vgs(th) (Max) @ Id
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3.5V @ 180µA
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Gate Charge (Qg) (Max) @ Vgs
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140nC @ 10V
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Vgs (Max)
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±20V
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Input Capacitance (Ciss) (Max) @ Vds
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10120pF @ 25V
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FET Feature
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-
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Power Dissipation (Max)
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250W (Tc)
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Operating Temperature
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-55°C ~ 175°C (TJ)
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Mounting Type
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Through Hole
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Supplier Device Package
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PG-TO220-3-1
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Package / Case
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TO-220-3
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