| Customization: | Available |
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| Conductive Type: | Unipolar Integrated Circuit |
| Integration: | GSI |
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Part Number
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STH110N10F7-2
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Description
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MOSFET N CH 100V 110A H2PAK
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Minimum Quantity
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1
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Packaging
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Tape & Reel (TR)
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Series
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DeepGATE™, STripFET™ VII
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FET Type
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N-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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100V
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Current - Continuous Drain (Id) @ 25°C
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110A (Tc)
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Drive Voltage (Max Rds On, Min Rds On)
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10V
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Rds On (Max) @ Id, Vgs
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6.5 mOhm @ 55A, 10V
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Vgs(th) (Max) @ Id
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4.5V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs
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72nC @ 10V
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Vgs (Max)
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±20V
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Input Capacitance (Ciss) (Max) @ Vds
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5117pF @ 50V
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FET Feature
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-
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Power Dissipation (Max)
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150W (Tc)
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Operating Temperature
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-55°C ~ 175°C (TJ)
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Mounting Type
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Surface Mount
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Supplier Device Package
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H2Pak-2
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Package / Case
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TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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